李磊
- 教师拼音名称：Li Lei
- 性别：男
- 职称：副教授
- 所属院系：微电子学院
- · Polarization-Engineered Quaternary Barrier InAlGaN/AlGaN Heterostructure Field-Effect Transistors Toward Robust High-Frequency Power Performance in AlGaN Channel Electronics
- · Demonstration of high thermal performance GaN-on-graphite composite bonded substrate for application in III-V nitride electronics
- · Polarization engineering via InAlN/AlGaN heterostructures for demonstration of normally-off AlGaN channel field effect transistors
- · Bonding GaN on high thermal conductivity graphite composite with adequate interfacial thermal conductance for high power electronics applications
- · Defect Reduction via Selective Lateral Epitaxy of GaN on an Innovative Masked Structure with Serpentine Channels
- · High-performance ultraviolet photodetectors based on lattice-matched InAlN/AlGaN heterostructure field-effect transistors gated by transparent ITO films
- · Distinct light emission from two-dimensional electron gas at a lattice-matched InAlN/ AlGaN heterointerface
- · Ultrathin inserted AlGaN/InAlN heterojunction for performance improvement in AlGaN-based deep ultraviolet light-emitting diodes
- · Enhanced Emission Efficiency of Deep Ultraviolet Light-Emitting AlGaN Multiple Quantum Wells Grown on an N-AlGaN Underlying Layer
- · Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with n-AlGaN underlayers