孟凡易
- 教师拼音名称：Meng Fanyi
- 出生日期：1987-11-30
- 性别：男
- 职称：教授
- 所属院系：微电子学院
- · Y. He, F. Meng, C. L. Kok and C. K. Ho, "A K-to-Ka Band Ultra Wideband Power Amplifier in 180-Nm SiGe Technology," 2024 IEEE International Conference on IC Design and Technology (ICICDT), Singapore, Singapore, 2024, pp. 1-4, doi: 10.1109/ICICDT63592.2024.10717834.
- · Z. Zhao, X. Chen, F. Meng and K. Ma, "A 22.6-to-73.9 GHz Ultra-Wideband Low-Noise Amplifier With Flat In-band Power Gain in 0.13-µm BiCMOS Technology," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713824.
- · Mu, H., Ding, C., Yi, T., Wang, Y., Meng, F., & Wang, J. (2024). Tunable bandpass filter based on epsilon-near-zero metamaterials using liquid crystals. Liquid Crystals, 51(5), 773–782. https://doi.org/10.1080/02678292.2024.2325573
- · Y. Guo, F. Meng, K. Ma, F. Feng and Y. Luo, "A Terahertz Wide-Angle Beam Steering Planar Double-Layers Lens," 2024 17th United Conference on Millemetre Waves and Terahertz Technologies (UCMMT), Palermo, Italy, 2024, pp. 70-73, doi: 10.1109/UCMMT62975.2024.10737834.
- · S. Zeng, Y. Cui, S. Bai, M. Luo and F. Meng, "A DC-54 GHz 5-bit Attenuator with Sub-0.35 dB/2.9° RMS Amplitude/Phase Errors in 0.18-μm SiGe BiCMOS," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713533.
- · N. Zhu, Y. Zhang and F. Meng, "A Tricoupled Resonant-Based Terahertz Switch Utilizing Tail-Transmission-Line with Ultra-Low Insertion Loss and Intrinsic ESD-Protection," IEEE Transactions on Terahertz Science and Technology, vol. 14, no. 6, pp. 884-887, Nov. 2024, doi: 10.1109/TTHZ.2024.3451625.
- · S. Bai, Y. Cui, M. Luo, S. Zeng and F. Meng, "A 5-18 GHz 6-bit Active Phase Shifter with Transformer-based Quadrature Poly-phase Networks in 0.18 µm SiGe BiCMOS," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713735.
- · Z. Miao, G. Ma, K. Wang and F. Meng, "A DC-to-8 GHz 60-dB Isolation SPDT Switch with Auxiliary Path Cancellation in 65-nm Bulk CMOS," 2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, Washington, DC, USA, 2024, pp. 1069-1072, doi: 10.1109/IMS40175.2024.10600428.
- · Z. Yang, F. Meng, B. Liu and K. Ma, "A 170-GHz Cascode Frequency Doubler With 15.6-dBm POUT in 130-nm SiGe BiCMOS," IEEE Transactions on Terahertz Science and Technology, vol. 14, no. 5, pp. 774-778, Sept. 2024, doi: 10.1109/TTHZ.2024.3435461.
- · M. Luo, Y. Cui, S. Bai, S. Zeng and F. Meng, "Design of a 2-18 GHz Differential Phase Invariant Low Noise Variable Gain Amplifier in 0.18-μm SiGe BiCMOS Technology," 2024 IEEE MTT-S International Wireless Symposium (IWS), Beijing, China, 2024, pp. 1-3, doi: 10.1109/IWS61525.2024.10713717.